ds30082 rev. 6 - 2 1 of 3 mmst3904 www.diodes.com diodes incorporated mmst3904 npn small signal surface mount transistor epitaxial planar die construction complementary pnp type available (mmst3906) ultra-small surface mount package available in lead free/rohs compliant version (note 2) characteristic symbol mmst3904 unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 200 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l e d b c h k g b e c mechanical data case: sot-323 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 5, on page 2 marking (see page 2): k2n ordering & date code information: see page 2 weight: 0.006 grams (approximate) sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad la yout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. e b c
ds30082 rev. 6 - 2 2 of 3 mmst3904 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo 60 v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5.0 v i e = 10 a, i c = 0 collector cutoff current i cex 50 na v ce = 30v, v eb(off) = 3.0v base cutoff current i bl 50 na v ce = 30v, v eb(off) = 3.0v on characteristics (note 3) dc current gain h fe 40 70 100 60 30 300 i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 50ma, v ce = 1.0v i c = 100ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) 0.25 0.30 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base- emitter saturation voltage v be(sat) 0.65 0.85 0.95 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo 4.0 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo 8.0 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 10 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.5 8.0 x 10 -4 small signal current gain h fe 100 400 output admittance h oe 1.0 40 s current gain-bandwidth product f t 300 mhz v ce = 20v, i c = 10ma, f = 100mhz noise figure nf 5.0 db v ce = 5.0v, i c = 100 a, r s = 1.0k f = 1.0khz switching characteristics delay time t d 35 ns v cc = 3.0v, i c = 10ma, v be(off) = - 0.5v, i b1 = 1.0ma rise time t r 35 ns ordering information (note 4) device packaging shipping mmst3904-7 sot-323 3000/tape & reel notes: 2. short duration test pulse used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free/rohs compliant version part number, please add "-f" suffix to the part number above. example : mmst3904-7-f. marking information k2n = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd k2n ym year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30082 rev. 6 - 2 3 of 3 mmst3904 www.diodes.com 0.1 1 10 0.1 1 10 100 1000 v , base-emitter (v) be(sat) saturation voltage i , collector current (ma) c fig. 5, typical base-emitter saturation volta g e vs. collector current i c i b =10 0.01 0.1 1 0.1 1 10 100 1000 v , collector-emitter (v) ce(sat) saturation voltage i , collector current (ma) c fig. 4, typical collector-emitter saturation volta g e vs. collector current i c i b =10 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) c fig. 3, typical dc current gain vs collector current t = -25c a t = +25c a t = 125c a v = 1.0v ce 0 5 1 5 10 0.1 1 10 100 c , input capacitance (pf) ibo c , output capacitance (pf) obo v , collector-base voltage (v) cb fig. 2, input and output capacitance vs. collector-base volta g e cibo cobo f=1mhz 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 350 0
|
